? 2009 ixys all rights reserved 1 - 8 20090826a mubw 50-17 t8 ixys reserves the right to change limits, test conditions and dimensions. converter - brake - inverter module (cbi3) with trench igbt technology application: ac motor drives with ? input from single or three phase grid ? three phase synchronous or asynchronous motor ? electric braking operation features ? high level of integration - only one power semiconductor module required for the whole drive ? igbt technology with low saturation voltage, low switching losses and tail current, high rbsoa and short circuit ruggedness ? epitaxial free wheeling diodes with hiperfast and soft reverse recovery ? industry standard package with insulated copper base plate and soldering pins for pcb mounting ? temperature sense included e72873 6 4 2 5 3 1 22 17 20 23 18 13 24 19 d11 7 11 8 9 21 14 16 15 10 12 d13 d15 d12 d14 d16 ntc d7 t7 d1 d3 d5 d2 d4 d6 t1 t3 t5 t2 t4 t6 input rectifer bridge d11 - d16 symbol conditions maximum ratings v rrm 2200 v i fav i davm i fsm t c = 80c; sine 180 t c = 80c; rectangular; d = 1 / 3 ; bridge t c = 25c; t = 10 ms; sine 50 hz 40 130 550 a a a p tot t c = 25c 110 w symbol conditions characteristic values (t vj = 25 c, unless otherwise specifed) min. typ. max. v f i f = 50 a; t vj = 25c t vj = 125c 1.25 1.25 1.5 v v i r v r = v rrm ; t vj = 25c t vj = 125c 0.8 0.05 ma ma r thjc (per diode) 1.1 k/w three phase rectifer brake chopper three phase inverter v rrm = 2200 v v ces = 1700 v v ces = 1700 v i favm = 60 a i c25 = 48 a i c25 = 74 a i fsm = 550 a v ce(sat) = 2.1 v v ce(sat) = 2.0 v
? 2009 ixys all rights reserved 2 - 8 20090826a mubw 50-17 t8 ixys reserves the right to change limits, test conditions and dimensions. output inverter t1 - t6 symbol conditions maximum ratings v ces t vj = 25c to 150c 1700 v v ges continuous 20 v i c25 i c80 i cm t c = 25c t c = 80c t c = 80c; t p = 1 ms 74 53 100 a a a p tot t c = 25c 290 w symbol conditions characteristic values (t vj = 25 c, unless otherwise specifed) min. typ. max. v ce(sat) i c = 50 a; v ge = 15 v t vj = 25c t vj = 125c 2.0 2.4 2.4 v v v ge(th) i c = 2 ma; v ge = v ce 5 6.5 v i ces v ce = v ces ; v ge = 0 v t vj = 25c t vj = 125c 1.0 0.4 ma ma i ges v ce = 0 v; v ge = 20 v 400 na c ies v ce = 25 v; v ge = 0 v; f = 1 mhz 4.4 nf q gon v ce = 900 v; v ge = 15 v; i c = 75 a 600 nc t d(on) t r t d(off) t f e on e off inductive load, t vj = 125c v ce = 900 v; i c = 50 a v ge = 15 v; r g = 8 ? 250 50 500 480 11 12 ns ns ns ns mj mj rbsoa i c = i cm ; v ge = 15 v r g = 27 ?; t vj = 125c v cek < v ces - l s di/dt v t sc (scsoa) v ce = 1000 v; v ge = 15 v; r g = 27 ? t p < 10 s; non-repetitive; t vj = 125c 10 s r thjc 0.43 k/w output inverter d1 - d6 symbol conditions maximum ratings i f25 i f80 t c = 25c t c = 80c 56 39 a a symbol conditions characteristic values min. typ. max. v f i f = 50 a; t vj = 25c t vj = 125c 2.0 2.0 2.4 v v i rm q rr t rr e rec i f = 50 a; di f /dt = -1200 a/s; t vj = 125c; v r = 900 v; v ge = 0 v 80 20 650 9 a c ns mj r thjc (per diode) 0.65 k/w equivalent circuits for simulation conduction igbt (typ. at v ge = 15 v; t j = 125c) t1-t6 v 0 = 1.0 v; r 0 = 25 mw t7 v 0 = 1.0 v; r 0 = 28 mw diode (typ. at t j = 125c) d1-d6 v 0 = 1.35 v; r 0 = 15 mw d7 v 0 = 1.65 v; r 0 = 37 mw d11-d16 v 0 = 0.83 v; r 0 = 4.1 mw i v 0 r 0
? 2009 ixys all rights reserved 3 - 8 20090826a mubw 50-17 t8 ixys reserves the right to change limits, test conditions and dimensions. brake chopper t7 symbol conditions maximum ratings v ces t vj = 25c to 150c 1700 v v ges continuous 20 v i c25 i c80 i cm t c = 25c t c = 80c t c = 80c; t p = 1 ms 48 34 60 a a a p tot t c = 25c 200 w symbol conditions characteristic values (t vj = 25 c, unless otherwise specifed) min. typ. max. v ce(sat) i c = 30 a; v ge = 15 v t vj = 25c t vj = 125c 1.9 2.1 2.2 v v v ge(th) i c = 2 ma; v ge = v ce 5 6.5 v i ces v ce = v ces ; v ge = 0 v t vj = 25c t vj = 125c 0.6 0.3 ma ma i ges v ce = 0 v; v ge = 20 v 400 na c iss v ce = 25 v; v ge = 0 v; f = 1 mhz 4.4 nf q gon v ce = 900 v; v ge = 15 v; i c = 30 a 600 nc t d(on) t r t d(off) t f e off e on inductive load, t vj = 125c v ce = 900 v; i c = 30 a v ge = 15 v; r g = 27 ? 165 40 700 400 7 6 ns ns ns ns mj mj rbsoa i c = i cm ; v ge = 15 v r g = 27 ?; t vj = 125c v cek < v ces - l s di/dt v t sc (scsoa) v ce = 900 v; v ge = 15 v; r g = 45 ? t p < 10 s; non-repetitive; t vj = 125c 10 s r thjc 0.62 k/w brake chopper d7 symbol conditions maximum ratings v rrm t vj = 25c to 150c 1700 v i f25 i f80 t c = 25c t c = 80c 30 21 a a symbol conditions characteristic values min. typ. max. v f i f = 30 a; t vj = 25c t vj = 125c 2.5 2.6 3.3 v v i r v r = v rrm ; t vj = 25c t vj = 125c 0.2 0.05 ma ma i rm t rr i f = 30 a; di f /dt = -800 a/s; t vj = 125c v r = 900 v 35 700 a ns r thjc (per diode) 0.9 k/w
? 2009 ixys all rights reserved 4 - 8 20090826a mubw 50-17 t8 ixys reserves the right to change limits, test conditions and dimensions. temperature sensor ntc symbol conditions characteristic values min. typ. max. r 25 b 25/50 t = 25c 4.75 5.0 3375 5.25 k? k module symbol conditions maximum ratings t vj t jm t stg operating -40...+125 +150 -40...+125 c c c v iso i isol < 1 ma; 50/60 hz; 1 min. 3400 v~ m d mounting torque (m5) 3 - 6 nm symbol conditions characteristic values min. typ. max. r therm-chip resistance terminal to chip 7 mw d s d a creepage distance on surface strike distance in air 12.7 9.6 mm mm r thch with heatsink compound 0.02 k/w weight 300 g dimensions in mm (1 mm = 0.0394")
? 2009 ixys all rights reserved 5 - 8 20090826a mubw 50-17 t8 ixys reserves the right to change limits, test conditions and dimensions. 0.01 0.1 1 0 100 200 300 400 500 2 3 4 5 6 789 1 10 10 2 10 3 10 4 0 20 40 60 80 100 120 140 0 50 100 150 200 250 300 350 20 40 60 80 100 120 140 160 1 10 100 1000 10000 0.0 0.2 0.4 0.6 0.8 1.0 1.2 t [s] t [ms] 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 z thjc [k/w] 0.0 0.5 1.0 1.5 2.0 0 20 40 60 80 100 i f [a] v f [v] t vj = 45c i fsm [a] i 2 t [a 2 s] t [ms] p tot [w] i d(av)m [a] t vj = 125c t vj = 25c i amb [c] i d(av) [a] t c [c] r tha : 5.0 k/w 2.5 k/w 1.5 k/w 1.0 k/w 0.75 k/w 0.5 k/w t vj = 150c 0 50hz, 80% v rrm t vj = 150c t vj = 45c fig. 2 surge overload current fig. 1 typ. forward current vs. voltage drop per diode fig. 3 i 2 t versus time per diode fig. 4 power dissipation versus direct output current & ambient temperature, sin 180 fig. 5 max. forward current vs. case temperature fig. 6 transient thermal impedance junction to case input rectifer bridge d11 - d16 r i t i 1 0.06 0.0085 2 0.024 0.001 3 0.586 0.045 4 0.114 0.85 5 0.317 0.35 p v t j r t h 1 r t h 2 c t h 2 c t h 1 t c
? 2009 ixys all rights reserved 6 - 8 20090826a mubw 50-17 t8 ixys reserves the right to change limits, test conditions and dimensions. 400 600 800 1000 1200 1400 30 40 50 60 70 80 90 400 600 800 1000 1200 1400 1600 01234 0 20 40 60 80 100 0 50 100 150 200 250 300 350 0 2 4 6 8 10 12 14 16 18 012345 0 20 40 60 80 100 v ce [v] i c [a] v ce [v] i c [a] q g [nc] -di/dt [a/s] v ge [v] i rm [a] t rr [ns] i rm t rr 5678910111213 0 20 40 60 80 100 0123 0 20 40 60 80 100 v f [v] i f [a] t vj = 25c 9 v 11 v 13 v t vj = 125c t vj = 25c t vj = 125c t vj = 25c i c [a] v ge [v] v ce = 900 v i c = 50 a t vj = 125c v r = 900 v i f = 50 a 80 80 8 8 27 27 v ge = 15 v 17 v 19 v t vj = 125c t vj = 125c fig. 7 typical output characteristic fig. 8 typical output characteristic fig. 9 typical transfer characteristic fig. 10 typical forward characteristic of free wheeling diode fig. 11 typical turn on gate charge output inverter t1 - t6 / d1 - d6 fig. 12 typ. turn-off characteristics of free wheeling diode
? 2009 ixys all rights reserved 7 - 8 20090826a mubw 50-17 t8 ixys reserves the right to change limits, test conditions and dimensions. 0 20 40 60 80 100 0 10 20 30 0 20 40 60 80 0 5 10 15 20 25 30 1 10 100 1000 10000 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 20 40 60 80 100 0 4 8 12 16 20 24 i c , i f [a] e [mj] t [ms] q rr [c] z thjc [k/w] e on v ce = 900 v v ge = 15 v r g = 8 t vj = 125c e off e rec e [mj] r g [ ] v ce = 900 v v ge = 15 v r g = 8 t vj = 125c i f [a] e on e off e rec single pulse v ce = 900 v v ge = 15 v i c /i f = 50 a t vj = 125c 0 30 60 90 120 150 100 1000 10000 t [c] r [ ] diode igbt fig. 13 typ. turn on energy & switching times versus collector current fig. 14 typ. turn off energy and switching times versus collector current fig. 15 typical turn-off characteristics of free wheeling diode output inverter t1 - t6 / d1 - d6 fig. 16 transient thermal impedance junction to case temperature sensor ntc fig. 17 typ. ntc resistance vs. temperature igbt diode r i t i r i t i 1 0.0326 0.0014 0.1941 0.0206 2 0.1311 0.0258 0.0542 0.0016 3 0.1492 0.1099 0.2549 0.0930 4 0.1169 0.6361 0.1461 0.5958 r r r c c c
? 2009 ixys all rights reserved 8 - 8 20090826a mubw 50-17 t8 ixys reserves the right to change limits, test conditions and dimensions. 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 10 20 30 40 50 60 v ce [v] i c [a] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 10 20 30 40 50 60 v f [v] i f [a] 0 50 100 150 200 250 300 350 0 5 10 15 q g [nc] v ge [v] 1 10 100 1000 10000 0.0 0.2 0.4 0.6 0.8 1.0 t [ms] z thjc [k/w] t vj = 125c t vj = 25c igbt diode single pulse t vj = 25c t vj = 125c i ce = 30 a v ce = 900 v 0 20 40 60 80 100 0 10 20 30 0 20 40 60 80 0 5 10 15 20 25 30 i c , i f [a] e [mj] e on v ce = 900 v v ge = 15 v r g = 8 t vj = 125c e off e rec e [mj] r g [ ] e on e off e rec v ce = 900 v v ge = 15 v i c /i f = 50 a t vj = 125c brake chopper t7 / d7 fig. 18 typical output characteristic fig. 19 typ. forward characteristics of brake diode fig. 20 typ. turn on energy & switching times versus collector current fig. 21 typ. turn off energy and switching times versus collector current fig. 22 typ. turn on gate charge fig. 23 transient thermal impedance junction to case
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